leshan radio company, ltd. sot? 23 s-l2sk3019lt1g maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) symbol limit unit v ds 30 v gs 20 i d i dm 225 t j , t stg -55 to 150 o c parameter v ma mw drain-source voltage p d pulsed drain current 1) operating junction and storage temperature range continuous drain current gate-source voltage total power dissipation silicon n-channel mosfet features low on-resistance fast switching speed we declare that the material of product compliance with rohs requirements. device marking shipping ordering information 3000/tape & reel 10,000/tape & reel kn l2sk3019lt1g l2sk3019lt3g kn applications interfacing,switching(30v,100ma) low voltage drive(2.5v) makes this ideal for portable equipment drive circuits can be simple parallel use is easy equivalent circuit drain source gate ? gate protection diode a pr otection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use a protection circuit when the fixed voltages are exceeded. 100 400 2) 1) pw 10 s, duty cycle 1% 2) with each pin mounted on the recommended lands. rev .a 1/4 1 2 3 esd>500 l2sk3019lt1g s-l2sk3019lt1g s-l2sk3019lt3g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. 1 2 3
leshan radio company, ltd. l2sk3019lt1g,s-l2sk3019lt1g z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) r ds(on) c iss |y fs | c oss c rss min. ? 30 ? 0.8 ? ? 20 ? ? ? ? ? ? 5 13 ? 9 4 1 ? 1.0 1.5 8 ? 713 ? ? ? ? av gs = 20v, v ds = 0v i d = 10 a, v gs = 0v v ds = 30v, v gs = 0v v ds = 3v, i d = 100 a i d = 10ma, v gs = 4v i d = 1ma, v gs = 2.5v v ds = 5v i d = 10ma, v ds = 3v v gs = 0v f = 1mhz v a v ? ? pf ms pf pf t d(on) ? 15 ? i d = 10ma, v dd 5v ns t r ? 35 ? v gs = 5v ns t d(off) ? 80 ? r l = 500 ? ns t f ? 80 ? r g = 10 ? ns typ. max. unit conditions gate-source leakage drain-source breakdown voltage zero gate voltage drain curren t gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time static drain-source on-state resistance z electrical characteristic curves 012345 0 0.05 0.1 0.15 drain current : i d (a) drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs = 1.5v 4v 2v fig.1 typical output characteristics ta = 25 c pulsed 04 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta = 125 c 75 c 25 c ? 25 c v ds = 3v pulsed fig.2 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs(th) (v) channel temperature : tch ( c) 0.5 ? 25 25 50 75 100 125 150 v ds = 3v i d = 0.1ma pulsed fig.3 gate threshold voltage vs. channel temperature 0.001 1 2 50 static drain-source on-state resistance : r ds(on) ( ? ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta = 125 c 75 c 25 c ? 25 c v gs = 4v pulsed fig.4 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 static drain-source on-state resistance : r ds(on) ( ? ) v gs = 2.5v pulsed drain current : i d (a) ta = 125 c 75 c 25 c ? 25 c fig.5 static drain-source on-state resistance vs. drain current ( ? ) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d = 0.1a static drain-source on-state resistance : r ds(on) ( ? ) ta = 25 c pulsed i d = 0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage rev .a 2/4
leshan radio company, ltd. ? 50 0 25 150 0 3 6 9 channel temperature : tch ( c ) ? 25 50 75 100 125 2 1 4 5 7 8 v gs = 4v pulsed i d = 100ma i d = 50ma static drain-source on-state resistance : r ds(on) ( ? ) fig.7 static drain-source on-state resistance vs. channel temperature 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta =? 25 c 25 c 75 c 125 c v ds = 3v pulsed fig.8 forward transfer admittance vs. drain current 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs = 0v pulsed ta = 125 c 75 c 25 c ? 25 c fig.9 reverse drain current vs. source-drain voltage ( ) 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta = 25 c pulsed v gs = 4v 0v fig.10 reverse drain current vs. source-drain voltage ( ? ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 c iss c oss c rss ta = 25 c f = 1mh z v gs = 0v fig.11 typical capacitance vs. drain-source voltage 0.1 10 20 500 swithing time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 ta = 25 c v dd = 5v v gs = 5v r g = 10 ? pulsed t d(off) t r t d(on) t f fig.12 switching characteristics (see figures 13 and 14 for the measurement circuit and resultant waveforms) z switching characteristics measurement circuit fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d (off) t r t on t d (on) fig.14 switching time waveforms rev .a 3/4 l2sk3019lt1g,s-l2sk3019lt1g
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev .a 4/4 l2sk3019lt1g,s-l2sk3019lt1g
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